Electrical contacts to 4H-SiC

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We have developed electrical contacts to 4H-SiC. Ohmic and Schottky contacts have been fabricated and characterised. We have used the contacts as a means of evaluating etch-induced damage on the SiC surface after ICP etching.

Nickel ohmic contacts on SiC as a function of annealing time at 1000 degrees C in N2 atmosphere

Typical I-V curves of diodes after etching at various bias voltages

Defect density vs dc bias voltage for the as-etched, annealed and simulated (using a parallel path model) diodes

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