Inductively coupled plasma etching of SiC

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We have been developing dry etch methods for the fast etching of SiC, as well as investigating the etch surface modification, as part of an EPSRC funded programme on developing microelectronic fabrication processes to produce microelectromechanical systems based in silicon carbide.

Figures of etch rates of SiC as a function of inductively coupled fluorinated plasma etching conditions

A typical C1s XPS spectrum of a SF6/O2 ICP etched SiC surface. Different bonds are indicated.

(a) F1s peaks from SiC etched at different dc biases (b) Icovalent/Isemi-ionic ratio in the F1s spectra as a function of dc bias

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